• Professor, Electrical & Computer Engineering
  • Hewlett Packard Enterprise Company Chair
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R. Stanley Williams

Educational Background

  • Ph.D., Physical Chemistry, University of California Berkeley – 1978
  • B.A., Chemical Physics, Rice University – 1974

Research Interests

    • Nano-scale electronic, ionic and photonic devices
    • Nonlinear dynamics and chaos
    • Cognition
    • Computation

Awards & Honors

  • IEEE Outstanding Engineering Manager (Western US and Canada), 2014
  • EETIMES 40th Anniversary edition top 10 Electronics Visionaries, 2012
  • EETIMES Annual Creativity in Electronics (ACE) Innovator of the Year Award, 2009
  • Glenn T. Seaborg Medal for contributions to chemistry (UCLA), 2007
  • Joel Birnbaum Prize (highest internal HPL award for research), 2005
  • Herman Bloch Medal for Industrial Research – University of Chicago, 2004
  • Feynman Prize in Nanotechnology, 2000

Selected Publications

  • 1. S. Kumar, J. P. Strachan and R. S. Williams, Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing. Nature 2017, 548, 318-321. DOI: 10.1038/nature23307
  • 2. K. M. Kim and R. S. Williams, A Family of Stateful Memristor Gates for Complete Cascading Logic. IEEE TCAS-I (2019). DOI: 10.1109/TCSI.2019.2926811
  • 3. C. Li, M. Hu, Y. Li, H. Jiang, N. Ge, E. Montgomery, N. Dávila, Z. Li, J. P. Strachan, P. Lin, W. Song, Z. Wang, M. Barnell, Q. Wu, R. S. Williams, J. J. Yang and Q. Xia, Analog signal and image processing with large memristor crossbars. Nature Electronics 2018, 1, 52. DOI: 10.1038/s41928-017-0002-z.
  • 4. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. R., P. Lin, H. L. Xin, Q. Wu, M. Barnell, M. Hu, N. Ge, J. P. Strachan, Z. Li, R. S. Williams, Q. Xia and J. Joshua Yang, Memristors with diffusive relaxation dynamics for neuromorphic computing. Nature Materials 2017, 16, 101-108. doi: 10.1038/nmat4756
  • 5. M. D. Pickett, G. Medeiros-Ribeiro and R. S. Williams, A scalable neuristor built with Mott memristors. Nature Materials 2013, 12, 114-117. DOI: 10.1038/nmat3510
  • 6. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart and R. S. Williams, Memristive switching mechanism for metal-oxide-metal nanodevices. Nature Nanotechnology 2008, 3, 429-433. DOI: 10.1038/nnano.2008.160
  • 7. D. Strukov, G. S. Snider, D. R. Stewart and R. S. Williams, The Missing Memristor Found. Nature 2008, 453, 80-83. DOI: 10.1038/nature06932
  • 8. J. R. Heath, P. J. Kuekes, G. S. Snider and R. S. Williams, A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology. Science 1998, 280, 1716-1721. DOI: 10.1126/science.280.5370.1716
  • 9. J. L. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart and R. S. Williams, Memristive switches enable stateful logic operations via material implication. Nature 2010, 454, 873-876. DOI: 10.1038/nature08940
  • 10. M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart and R. S. Williams, Switching Dynamics in Titanium Dioxide Memristive Devices. J. Appl. Phys. 2009, 106, 074508. DOI: 10.1063/1.3236506
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