• Professor
Chin B. Su

Educational Background

  • Ph.D. 1979, Brandeis University (Physics)

Research Interests

    • Surface Plasmon  Resonance (SPR) Sensors for Bio-Detection:
    • Multipass SPR
    • Field Assist SPR 
    • Formulas for SPR Calculations Using Matrix Techniques 
    • Fiber Optic Ratio Meter for Fast Measurement of Refractive Index of Liquid
    • Surface Plasmon Modes in Nanoparticles
    • Gold-Silica Nanoshell (doc)

Awards & Honors

  • 1985 Leslie H. Warner Technical Achievement Award
  • 1991 Texas Engineering Experimental Station Fellow
  • 1993 Haliburton Award of Excellence

Selected Publications

  • C. B. Su, “An analytical solution of kinks and nonlinearities driven by near-field displacement instabilities in stripe geometry diode lasers," J. Applied. Physics, Vol. 52, No.2, pp. 2665-2673 ,1981.
  • C. B. Su and R. Olshansky, “Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sources," Applied Physics Lett., Vol.41, No. 9, pp. 833-835, 1982.
  • J. Lee and C. B. Su, “Near Ballistic transport in a non-parabolic band structure for n- and p-GaAs," IEEE Transactions Electron Devices, Vol. ED-29, No. 5, pp. 933-935, 1982.
  • C. B. Su, J. Schlafer, J. Manning and R. Olshansky, “Measurement of radiative and Auger recombination rates in p-type InGaAsP diode lasers" , Electronics Lett., Vol. 18, No. 14, pp. 595-596, 1982.
  • C. B. Su, J. Schlafer, J. Manning and R. Olshansky, “Measurement of radiative recombination coefficient and carrier leakage in 1.3 micron InGaAsP lasers with lightly doped active layers," Electronics Lett. , Vol. 18, No. 25/26, pp. 1108-1110, 1982.
  • C. B. Su and R. Olshansky, “Measurement of threshold carrier density of III-V compound semiconductor laser diodes,” Applied Physics Lett., Vol. 43, No. 9, pp. 856-858, 1983.
  • J. Manning, R. Olshansky, C. B. Su and W. Powazinik, “Measurement of carrier and lattice heating in 1.3 micron InGaAsP light-emitting diodes”, Applied. Physics Lett., Vo. 43, No. 2, pp. 134-135, 1983.
  • J. Manning, R. Olshansky and C. B. Su, “The carrier induced index change in AlGaAs and 1.3 micron InGaAsP diode lasers,” IEEE J. Quantum Electonics., Vol. QE-19, pp. 1525 ,1983.
  • C. B. Su, R. Olshansky, W. Powazinik and J. Manning, “Anomalous temperature dependence of the effective bimolecular recombination and the explanation of low T0 in 1.3 micron InGaAsP light sources,” IEEE Transactions Electron Devices, Vol. ED-30, pp. 1594 ,1983.
  • C. B. Su, R. Olshansky, J. Manning and W. Powazinik, “Carrier dependence of the radiative coefficient in III-V semiconductor light sources,” Applied. Physics Lett., Vol. 44, No. 8, pp. 732-734, 1984.