Chin B. Su

Professor

Image of Chin Su

Office: WEB 205G
Phone: 979.845.7584
Fax: 979.845.6259
Email: c-su4831@tamu.edu

Google Scholar Profile

Research Interests

  • Surface Plasmon  Resonance (SPR) Sensors for Bio-Detection:
  • Multipass SPR
  • Field Assist SPR 
  • Formulas for SPR Calculations Using Matrix Techniques 
  • Fiber Optic Ratio Meter for Fast Measurement of Refractive Index of Liquid
  • Surface Plasmon Modes in Nanoparticles
  • Gold-Silica Nanoshell (doc)

Awards & Honors

  • 1985 Leslie H. Warner Technical Achievement Award
  • 1991 Texas Engineering Experimental Station Fellow
  • 1993 Haliburton Award of Excellence

Education

  • Ph.D. 1979, Brandeis University (Physics)

Selected Publications

C. B. Su, “An analytical solution of kinks and nonlinearities driven by near-field displacement instabilities in stripe geometry diode lasers," J. Applied. Physics, Vol. 52, No.2, pp. 2665-2673 ,1981.

C. B. Su and R. Olshansky, “Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sources," Applied Physics Lett., Vol.41, No. 9, pp. 833-835, 1982.

J. Lee and C. B. Su, “Near Ballistic transport in a non-parabolic band structure for n- and p-GaAs," IEEE Transactions Electron Devices, Vol. ED-29, No. 5, pp. 933-935, 1982.

C. B. Su, J. Schlafer, J. Manning and R. Olshansky, “Measurement of radiative and Auger recombination rates in p-type InGaAsP diode lasers" , Electronics Lett., Vol. 18, No. 14, pp. 595-596, 1982.

C. B. Su, J. Schlafer, J. Manning and R. Olshansky, “Measurement of radiative recombination coefficient and carrier leakage in 1.3 micron InGaAsP lasers with lightly doped active layers," Electronics Lett. , Vol. 18, No. 25/26, pp. 1108-1110, 1982.

C. B. Su and R. Olshansky, “Measurement of threshold carrier density of III-V compound semiconductor laser diodes,” Applied Physics Lett., Vol. 43, No. 9, pp. 856-858, 1983.

J. Manning, R. Olshansky, C. B. Su and W. Powazinik, “Measurement of carrier and lattice heating in 1.3 micron InGaAsP light-emitting diodes”, Applied. Physics Lett., Vo. 43, No. 2, pp. 134-135, 1983.

J. Manning, R. Olshansky and C. B. Su, “The carrier induced index change in AlGaAs and 1.3 micron InGaAsP diode lasers,” IEEE J. Quantum Electonics., Vol. QE-19, pp. 1525 ,1983.

C. B. Su, R. Olshansky, W. Powazinik and J. Manning, “Anomalous temperature dependence of the effective bimolecular recombination and the explanation of low T0 in 1.3 micron InGaAsP light sources,” IEEE Transactions Electron Devices, Vol. ED-30, pp. 1594 ,1983.

C. B. Su, R. Olshansky, J. Manning and W. Powazinik, “Carrier dependence of the radiative coefficient in III-V semiconductor light sources,” Applied. Physics Lett., Vol. 44, No. 8, pp. 732-734, 1984.