Two graduate students in the Department of Electrical and Computer Engineering at Texas A&M University received high rankings in the student paper competition at the Institute of Electrical and Electronics Engineers (IEEE) 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Jaeyoung Lee received the second best paper award and Juseok Bae’s paper was ranked fourth in the student paper competition. Both are Ph.D. students under the advisement of Dr. Cam Nguyen.
Lee’s paper, “A 13/24/35-GHz Concurrent Tri-band LNA with Feedback Notches,” was co-written by Nguyen. In his paper, Lee describes a new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz that has been designed using a novel tri-band load for stable and high stop-band rejection without additional area and power consumption. The proposed tri-band load is composed of two passive LC notch filters with feedback technique. The developed TBLNA is the first concurrent TBLNA implemented on chip working up to millimeter-wave frequencies.
Lee and Nguyen were co-authors on Bae’s paper, “A 10–67-GHz CMOS Step Attenuator with Improved Flatness and Large Attenuation Range." In his paper, Bae said a four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness, and large attenuation range from 10–67 GHz. The design method is based on the frequency-response characteristics and topologies of the conventional Pi-, T-, and distributed attenuators. Over broad frequency band 10–67 GHz, the simulated and measured results exhibit excellent attenuation flatness of and large attenuation range.
Lee was born in Yangyang, Gangwon-do, Korea, in 1976. He received the B.S. and M.S. degrees in electrical engineering from Kwangwoon University in Seoul, Korea. From 2009, he has been working towards the Ph.D. degree at Texas A&M. His research interests include analog, RF, microwave and millimeter-wave integrated circuits and systems. From 2005 to 2008, he was with Integrant Technologies Inc., an analog devices company (now RAONTECH Inc.) in Seongnam, Korea, where he designed and developed various CMOS analog and RF integrated circuits for wireless communication and mobile TV systems. From 2008 to 2009, he was with Samsung Electronics in Suwon, Korea, where he designed CMOS RF and millimeter-wave integrated circuits for digital TV and 60-GHz wireless HD systems.
Bae was born in Seoul, South Korea, in 1981. He received the B.S. and M.S. degrees in electricity and electronic engineering from Soon Chun Hyang University in Chungcheongnam-do, South Korea. He is currently working toward his Ph.D. at Texas A&M and working at Texas A&M University at Qatar as a graduate research assistant. His research interests include CMOS/BICMOS integrated circuits and systems for RF, microwave, and millimeter-wave applications.
Lee’s and Bae’s papers were among 10 finalists chosen at the SiRF student paper competition. The IEEE Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems have been at the forefront of moving silicon technologies into microwave and millimeter-wave applications, a development now widely accepted and of great importance.