Selected Recent Publications

Y. Kuo, invited, “A Metal Oxide Antifuse-Diode Device,” ECS Trans. Low-Dimensional Nanoscale Electronic and Photonic Devices 3, accepted (2015).
Y. Kuo, invited, “A new type of solid state incandescent LED (SSI-LED) prepared by sputter deposited metal oxide thin film on Si wafer,” 13thISSP Proc., 20-24 (2015).
D. Li, K. Kim, S. Zhang, G. Dong, Y. Kuo, “High-performance organic–inorganic hybrid optocouplers based on organic light-emitting diodes and a-Si:H photodiodes,” Sensors and Actuators A, 236, 364–368 (2015).
Y. Kuo, plenary, “Principles and possible system‐on‐wafer applications of SSI‐LEDs.” AM-FPD 15 Proc., 9-12 (2015).
Y. Kuo, invited, “A Diode-Like Antifuse Device Made of High-k Dielectric,” ECS Trans., 67(1) 183-189 (2015).
Y. Kuo, invited, “A Solid State Thin Film Incandescent Light Emitting Device,” IEEE Trans. Elec. Dev., 62(11), 3536-3540 (2015).
Y. Kuo, invited, “Solid State Incandescent Light Emitting Devices Made of IC Compatible Material and Fabrication Process,” IEEE Elec. Dev. Soc. News Letters, 22-2, 1-5 (2015).
Y. Kuo, Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology paper, “Research on Nano and Giga Electronics – Breakthroughs Along the Path,” ECS Trans. Advanced CMOS‐Compatible Semiconductor Devices 17, 66(5), 139-154 (2015).
C.-C. Lin and Y. Kuo, “Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack,” Appl. Phys. Lett., 106, 121107 (2015).
Y. Kuo, invited, “A Solid State Thin Film Incandescent Light Emitting Device,” Proc. Intel. Elec. Dev. Meet. (IEDM 2014), 104-107 (2014). Paper was cited as a Tech News in IEEE Spectrum website (12/2/2014).
C.-C. Lin and Y. Kuo, “Factors affecting light emission from solid state incandescent light emitting devices with sputter deposited Zr-doped HfO2 thin films,” ECS J. Solid State Sci. Technol., 3(10) Q182-189 (2014).
S. Zhang, Y. Kuo, X. Liu, and C.-C. Lin, “Nonvolatile Memories Based on AlOx Embedded ZrHfO High-k Gate Dielectric,” MRS Proc., 1691, mrss14-1691-bb10-04 (2014). DOI: 10.1557/opl.2014.597
K. Kim and Y. Kuo, “p+ layer effects on a-Si:H solar cell performance,” IEEE Proc. 40th Photovoltaic Specialist Conf. PVSC, 3055-3059 (2014).
C.-C. Lin, Y. Kuo, S. Zhang,* “Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack,” J. Vac. Sci. Technol. B, 32(3), 03D116-1 to -6 (2014) .
C.-C. Lin and Y. Kuo, “White Light Emission from Ultra Thin Tungsten Metal Oxide Film,”J. Vac. Sci. Technol. B, 32, 011208-1 to -6 (2014). Cover page article of the issue.
C.-C. Lin and Y. Kuo, “Nanocrystalline Cadmium Selenide Embedded ZrHfO High-k Gate Dielectric Stack for Nonvolatile Memories,”J. Appl. Phys., 115, 084113 (2014).
T. Yuan, X. Liu, S. Z. Ramadan*, and Y. Kuo, “Bayesian Analysis for Accelerated Life Tests Using Dirichlet Process Weibull Mixture Model,” IEEE Trans. Reliability, 63(1), 58-67 (2014).
Y. Kuo, “Accumulation Layers,” Wiley Encyclopedia of Electrical and Electronics Engineering, J. Webster (ed.), 2nd Ed., John Wiley & Sons, Inc. (2014). Published Online : 24 JAN 2014, DOI: 10.1002/047134608X.W3201.pub2
Y. Kuo, invited, “Metal Oxide High-k Thin Films – from Gate Dielectrics to Nonvolatile Memories to LEDs,” ECS Trans., 54(1), 273-281 (2013).
Y. Kuo, invited, “Nanocrystals Embedded High-k Nonvolatile Memories – bulk film and nanocrystal material effects,” ECS Trans., 53(4), 121-128 (2013).
Y. Kuo, invited Memorial Plenary Speech of 20th Year Conference, “The Progress of Thin Film Transistor Technology - Large-Area Mass Production and Beyond,” Proc. Active Matrix Flat Panel Displays, 5-8 (2013).
Y. Kuo and C.-C. Lin*, “Light Emitting from Sputter Deposited Ultra Thin Hafnium Oxide Films under Electric Bias Conditions,” Solid State Electronics, 89, 120-123 (2013).
Y. Kuo and C.-C. Lin*, “Electroluminescence from Metal Oxide Thin Films,” ECS Solid State Lett., 2(8) Q59-Q61 (2013).
Y. Kuo and C.-C. Lin*, “A Light Emitting Device Made from Thin Zirconium-doped Hafnium Oxide High-k Dielectric Film with or without an Embedded Nanocrystal Layer,” Appl. Phys. Letts., 102(3), 031117 (2013). Selected a Research Highlight by APL, February 5, 2013. Downloaded 1,000 time within 2 weeks of publication.
C.-C. Lin and Y. Kuo, “Improvement of Zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum,” J. Vac. Sci. Technol. B 31(3), 030605-1 to -5 (2013). A Top 20 Most Downloaded article, May 2013.
Y. Kuo, invited, “Thin Film Transistor Technology – Past, Present, and Future,” Electrochem. Soc. Interface, 22(1), 55-60 (2013).
C.-C. Lin* and Y. Kuo, “Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-k Nonvolatile Memory Functions,” ECS J. Solid State Sci. Technol., 2(1) Q16-Q22 (2013).